Reflective amplified modulator operating at 40 Gbps up to 85°C as colorless transceiver for optical access networks
- Resource Type
- Conference
- Authors
- Lawniczuk, K.; Patard, O.; Guillamet, R.; Chimot, N.; Garreau, A.; Kazmierski, C.; Aubin, G.; Merghem, K.
- Source
- 2012 International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. :116-119 Aug, 2012
- Subject
- Photonics and Electrooptics
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Temperature measurement
Semiconductor optical amplifiers
Optical fiber amplifiers
Optical modulation
Wavelength division multiplexing
Remote amplified modulator
electro-absorption modulator
indium phosphide
optical access networks
photonic integrated circuit
- Language
- ISSN
- 1092-8669
In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.