A Comprehensive Negative Bias Temperature Instability Model for Gallium-nitride Metal-insulator-semiconductor High Electron Mobility Transistors From 77K to 393K
- Resource Type
- Conference
- Authors
- Kuo, Ting-Tzu; Chen, Ying-Chung; Lin, Yu-Shan; Chien, Yu-Chieh; Ciou, Fong-Min; Chen, Po-Hsun; Chang, Ting-Chang
- Source
- 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2021 IEEE International Symposium on the. :1-4 Sep, 2021
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Negative bias temperature instability
Degradation
Temperature distribution
Thermal variables control
HEMTs
Threshold voltage
Impact ionization
cryogenic temperature
thermal emission
negative bias temperature instability
- Language
- ISSN
- 1946-1550
This work studies the degradation mechanisms behind negative bias temperature instability (NBTI) in galliumnitride metal-insulator semiconductor high electron mobility transistors (GaN MIS-HEMT) under a wide range of temperature conditions (77K to 393K). The positive shift of threshold voltage increases with temperature from 77K to 303K, owing to the trapping of electrons in the silicon nitride (Si 3 N 4 ) bulk layer and at the Si 3 N 4 /aluminum gallium nitride (AlGaN) interface. Anomalously, the threshold voltage shift substantially reduces from 303K to 393K. Such an abnormal phenomenon could be attributed to additional hole trapping in Si 3 N 4 due to impact ionization. The occurrence of impact ionization can be further evidenced by the recovery behavior if the test devices. Accordingly, a comprehensive model is proposed to clarify the degradation behavior of NBTI for GaN MIS-HEMT under different temperature conditions.