Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications
- Resource Type
- Conference
- Authors
- Gutierrez-Aitken, Augusto; Chang-Chien, Patty; Wen Phan; Scott, Dennis; Oyama, Bert; Sandhu, Randy; Zhou, Joe; Nam, Peter; Hennig, Kelly; Parlee, Matthew; Poust, Ben; Khanh Thai; Geiger, Craig; Oki, Aaron; Kagiwada, Reynold
- Source
- 2009 IEEE MTT-S International Microwave Symposium Digest Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. :1109-1112 Jun, 2009
- Subject
- Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Communication, Networking and Broadcast Technologies
CMOS technology
Indium phosphide
Heterojunction bipolar transistors
Space technology
III-V semiconductor materials
CMOS process
Semiconductor materials
Silicon
Dynamic range
Bandwidth
Analog-digital conversion
CMOSFETs
Heterogeneous Integration
- Language
- ISSN
- 0149-645X
Northrop Grumman Space Technology (NGST) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in ADC dynamic range and bandwidth