We study the morphologies, material properties, and optical characteristics of an InGaN/GaN QW light-emitting diode (LED) structure grown on a -oriented one-dimensional trench-patterned Si (110) substrate with other samples of different trench orientations on Si (110) substrate, flat Si (110) substrate, and Si (111) substrate are demonstrated. By comparing the performances of the fabricated LEDs based on the three samples of continuous top surfaces, it is found that the sample of -oriented trench has the strongest output power, lowest device resistance, and smallest spectral shift range in increasing injection current.