Temperature-gradient post-growth annealing of CdMnTe wafers for nuclear radiation detection applications
- Resource Type
- Conference
- Authors
- Egarievwe, Stephen U.; Kithinji, David K.; Jow, Julius O.; Egarievwe, Alexander A.; Hales, Zaveon M.; Martin, Richard D.; Chan, Wing; Yang, Ge; Camarda, Giuseppe S.; James, Ralph B.
- Source
- 2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2014 IEEE. :1-4 Nov, 2014
- Subject
- Nuclear Engineering
Annealing
Crystals
Manganese
Tellurium
Zinc
Detectors
Furnaces
- Language
Cadmium Manganese Telluride (CdMnTe) is one of the semiconductor materials recently being developed as X-ray and gamma-ray detectors capable of operating at room temperature. This paper presents the results of temperature-gradient post-growth annealing of CdMnTe crystals grown by Bridgman technique. Migration of Te inclusions from the low-temperature side to the high-temperature side of CdMnTe wafers was recorded for an annealing temperature of 715 °C at a temperature gradient of 24 °C/cm and annealing time of 30 minutes. Size reduction and elimination of Te inclusions were also recorded for a CdMnTe wafer annealed at 730 °C with a temperature gradient of 18 °C/cm for 18 hours. A two-dimensional analysis of an 810 × 1350 µm2 sample area showed a 76% reduction in the Te-inclusion concentration.