Heavy Ion Induced SEU and MBU Sensitivity of 3D NAND Flash Structures
- Resource Type
- Conference
- Authors
- Coic, L.; Augustin, G.; Serrano, L.; Guillermin, J.; Chatry, N.; Carron, J.; Ecoffet, R.
- Source
- 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2022 22nd European Conference on. :1-8 Oct, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Three-dimensional displays
Sensitivity
Microprocessors
Single event upsets
Computer architecture
Ions
Flash memories
3D NAND Flash Memory
Single Event Effect
Heavy ions
Modeling
Monte-Carlo simulation
- Language
- ISSN
- 1609-0438
The use of 3D integration technologies in future satellites is increasingly considered in order to obtain better performance gains. Testability, reliability assessment and radiation resistance are important issues for space applications. It has been shown that 3D architectures give birth to enhanced Single Event Effects sensitivities, which may need to be assessed in different ways than their planar predecessors.In this work, the heavy ions induced SEU and MBU sensitivities of commercially off the shelf (COTS) 3D NAND flash memories are investigated through experimental characterization and compared to Monte-Carlo simulations performed thanks to the TRADCARE © software. Dedicated Scanning Electron Microscope (SEM) imagery was used to propose a highly representative model of the memory array giving good confidence in these simulations.