Methodology to qualify silicon carbide MOSFETs for single shot avalanche events
- Resource Type
- Conference
- Authors
- Pala, V.; Hull, B.; Richmond, J.; Butler, P.; Allen, S.; Palmour, J.
- Source
- 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on. :56-59 Nov, 2015
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Transportation
Silicon carbide
MOSFET
Stress
Temperature
Silicon
Inductors
Adiabatic
Silicon Carbide
Avalanche Ruggedness
- Language
This paper presents a methodology to establish and qualify safe bounds of operation for Silicon Carbide power devices under avalanche stress. The methodology involves using a statistical method to estimate an avalanche safe operating area, and by ensuring that device reliability is not degraded after avalanche stress. We also demonstrate the avalanche capability of the C3M 900V SiC MOSFETs, which have been fully qualified for avalanche ruggedness by employing this methodology.