Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe
- Resource Type
- Periodical
- Authors
- Belas, E.; Bugar, M.; Grill, R.; Franc, J.; Hoschl, P.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 56(4):1758-1762 Aug, 2009
- Subject
- Nuclear Engineering
Bioengineering
Annealing
Tellurium
Conducting materials
Crystalline materials
Conductivity
Contracts
Crystals
Temperature measurement
Gamma ray detectors
Phase detection
CdTe
diffusion
inclusions
precipitates
- Language
- ISSN
- 0018-9499
1558-1578
Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately $10^{9}\ \Omega{\hbox {cm}}$ was prepared by annealing under Te overpressure. In-situ high temperature measurement of the electrical conductivity and Hall coefficient is used to find annealing conditions for undoped and slightly In-doped CdTe. The dominant extrinsic acceptor level with a concentration of ${\rm N}_{\rm A}=4\times 10^{15}\ {\hbox {cm}}^{-3}$ was determined and Cd-rich annealing was used for the preparation of semi-insulating CdTe.