A line of 4–40 GHz GaAs low noise medium power amplifiers for SDH relay stations
- Resource Type
- Conference
- Authors
- Bondarev, Oleg; Mirvoda, Denis; Kosogor, Alexey; Tikhov, Yuri
- Source
- 2018 11th German Microwave Conference (GeMiC) Microwave Conference (GeMiC), 2018 11th German. :187-190 Mar, 2018
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
PHEMTs
Gallium arsenide
Power amplifiers
Noise measurement
Power generation
Gain
Microwave amplifiers
broadband amplifier
low noise amplifier
medium power amplifier
millimeter-wave
MMIC
relay station
- Language
This paper presents a line of 4–40 GHz GaAs low noise medium power amplifiers for SDH stationary relay stations with adaptive change of modulation scheme depending on jamming situation. Because of given application, broadband low noise amplifier MMICs provide also increased output power up to medium level. The line of three amplifier MMICs is optimized for noise figure performance down to 1.0–3.0 dB simultaneously with maximum output power at 1 dB gain compression point higher than 10 dBm throughout the allocated bandwidth, having gain of 20–30 dB. The chips for all three amplifiers are fabricated using a 0.15 µm GaAs pHEMT Foundry process provided by UMS.