Radiation Characterization Results of AP54RHC 30 krad(Si) Logic Family
- Resource Type
- Conference
- Authors
- Ghoshal, A.; Billings, A.; Hamlyn, M.; Quiroz, A.; Schulmeyer, K.
- Source
- 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), 2022 IEEE. :1-6 Jul, 2022
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Nuclear Engineering
Photonics and Electrooptics
Degradation
Single event transients
Single event latchup
Conferences
Silicon
Robustness
Rad-Hard
Cold Sparing
Total Ionizing Dose
Single Event Transient
Single Event Latchup
Majority Voting
- Language
- ISSN
- 2154-0535
This paper details the Total Ionizing Dosage (TID), Single Event Latchup (SEL), and Single Event Transient (SET) characterization results for Apogee Semiconductor’s AP54RHC logic family. Results for TID up to 45krad (Si) and Single Event Effects (SEE) at a maximum LE$\text{T}_{EFF}=74.7 \text{MeV}\cdot \text{cm}^{2}$/mg are presented. The paper also presents SEE event rate calculations for LEO and GEO space applications using upper limit cross-sections with a 95% confidence interval. These results demonstrate that this device family is well suited for space applications.