Transistors, composed of natural atomically thin 2-D semiconductors, have shown great potential for electronics beyond silicon-based complementary metal-oxide-semiconductor technology. Here, we explore the group-11-chalcogen semiconductors ( $\text{M}_{{2}}\text{X}$ : M = Au, Ag; X = S, Se, Te), a recently discovered 2-D family, for transistor applications and assess the performance limit of transistors comprised of these semiconductors using first-principles-based nanoscale device simulations. $\text{M}_{{2}}\text{X}$ transistors’ performance is encouraging and competitive among promising 2-D transistors, down to 5 nm gate length. The best performing transistor is n-type, composed of Au $_{{2}}\text{S}$ , with a large ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio ( ${10}^{{4}}$ ) and good electrostatic control (subthreshold slope (SS) < 70 mV/decade) for 5 nm gate length.