Benchmarking the device performance at sub 22 nm node technologies using an SoC framework
- Resource Type
- Conference
- Authors
- Shrivastava, Mayank; Verma, Bhaskar; Baghini, M. Shojaei; Russ, Christian; Sharma, Dinesh Kumar; Gossner, Harald; Rao, V. Ramgopal
- Source
- 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009
- Subject
- Components, Circuits, Devices and Systems
Robotics and Control Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electrostatic discharge
FinFETs
Random access memory
Inverters
Nanoscale devices
MOSFETs
Robustness
Delay
Integrated circuit interconnections
Logic devices
- Language
- ISSN
- 0163-1918
2156-017X
For the first time this paper makes an attempt at predicting the System-on-Chip (SoC) performance (i.e. logic, SRAM, ESD and I/O) of various sub 20 nm channel length planar and non-planar SOI devices using extensive & well calibrated 3D device and mixed-mode TCAD simulations. It has been shown that the non-planar devices such as FinFETs are not the ideal choice for SoC applications and perform poorly in comparison to the Ultra thin body (UTB) planar SOI MOSFETs. We further show different strategies to optimize the planar UTB MOSFETs for improved ESD robustness and I/O performance.