Systematic Investigation of 3-level Si MCM-D Transformer / Balun Structures for 0.3-10 GHz Wireless Applications under the European TWiCS Program
- Resource Type
- Conference
- Authors
- Jansen, R.H.; Jotzo, J.; Boysen, Ph.A.; Kahmen, G.; Meyer, A.; Arnold, R.G.; Pedder, D.J.
- Source
- 1998 28th European Microwave Conference Microwave Conference, 1998. 28th European. 2:509-514 Oct, 1998
- Subject
- Fields, Waves and Electromagnetics
Impedance matching
Radio frequency
Silicon
Dielectric substrates
Microwave technology
Power transmission lines
Metallization
Inductors
Conductors
Cost function
- Language
A wide range of novel vertically integrated transformer / balun structures has been developed under TWiCS [1] (Technological Solutions for Wireless Communications Subsystems) using a RF MCM-D silicon process. This includes components from single-to-single-ended to balanced-to-balanced configurations, the wireless bands from 0.3-10 GHz and impedance ratios from 12.5:50-50:450Ω . An overview of this work is presented.