Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes
- Resource Type
- Conference
- Authors
- Binder, Andrew T.; Pickrell, Greg W.; Allerman, Andrew A.; Dickerson, Jeramy R.; Yates, Luke; Steinfeldt, Jeffrey; Glaser, Caleb; Crawford, Mary H.; Armstrong, Andrew; Sharps, Paul; Kaplar, Robert J.
- Source
- 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :288-292 Nov, 2021
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Silicon compounds
Schottky diodes
Photonic band gap
Conferences
Rectifiers
Voltage
Leakage currents
vertical GaN diode
etch-and-regrowth
Junction Barrier Schottky
power devices
- Language
This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V was achieved at ~ 1 mA reverse leakage, with a sub 1 V turn-on and a specific on-resistance of 10 mΩ-cm 2 . This result is compared to other reported JBS devices in the literature and our device demonstrates the lowest leakage slope at high reverse bias. A large initial leakage current is present near zero-bias which is attributed to a combination of inadequate etch-damage removal and passivation induced leakage current.