Vertical 1.2kV SiC Power MOSFETs with High-k/Metal Gate Stack
- Resource Type
- Conference
- Authors
- Wirths, Stephan; Arango, Yulieth Christina; Prasmusinto, Alyssa; Alfieri, Giovanni; Bianda, Enea; Mihaila, Andrei; Kranz, Lukas; Bellini, Marco; Knoll, Lars
- Source
- 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :103-106 May, 2019
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Logic gates
MOSFET
Silicon carbide
High-k dielectric materials
Hysteresis
Dielectrics
Temperature measurement
Wide band gap
high-k
1.2kV MOSFETs
SiC
SiC power MOSFETs
- Language
- ISSN
- 1946-0201
We demonstrate the first integration of high-k/metal gate stacks in vertical 1.2kV SiC power MOSFETs including static and dynamic characterization as well as safe operation area (SOA). The high-k/4H-SiC MOS interface exhibits a remarkably low interface defect state density and improved threshold voltage stability compared to conventional gate stacks based on SiO 2 . Moreover, we achieved an impressive performance boost in terms of on-resistance due to this low-defective interface and increased gate capacitance. Compared to vertical devices with SiO 2 /poly Si gate stacks these devices exhibit a negligible hysteresis.