Process variations in dielectric inserted side contact multilayer graphene nanoribbon interconnects using montecarlo simulations
- Resource Type
- Conference
- Authors
- Kumar, Mekala Girish; Agrawal, Yash; Kumar, Vobulapuram Ramesh
- Source
- 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC) Electronics Packaging Technology Conference (EPTC), 2022 IEEE 24th. :252-255 Dec, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Performance evaluation
Analytical models
Monte Carlo methods
Graphene
Very large scale integration
Nonhomogeneous media
System-on-chip
- Language
Dielectric inserted side contact multilayer graphene nanoribbon (DSMLGNR) interconnect is envisaged as one of the prominent solutions for on-chip global interconnects. The tremendous growth in nanofabrication technology processes and huge number of transistors on a very large scale integrated (VLSI) silicon chip have made process-induced variations in devices and interconnects quite prominent. To investigate these variations a driver-interconnect-load system is considered in the present work. The impact of device and interconnect parameter variability on the electrical performance of on-chip DSMLGNR interconnect system is analyzed. The Monte Carlo analyses for propagation delay and power dissipation are performed using HSPICE simulations for DSMLGNR interconnects.