Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications
- Resource Type
- Conference
- Authors
- Chen, X.; Matthews, K. D.; Hao, D.; Schaff, W. J.; Eastman, L. F.; Walukiewicz, W.; Ager, J. W.; Yu, K. M.
- Source
- 2008 33rd IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE. :1-6 May, 2008
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Photovoltaic cells
Molecular beam epitaxial growth
Probes
PIN photodiodes
Electrons
Semiconductor materials
Lighting
Indium
Photonic band gap
Temperature measurement
- Language
- ISSN
- 0160-8371
In x Ga 1-x N and In x Al 1-x N alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×10 17 cm −3 is achieved on Mg-doped In 0.04 Ga 0.96 N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAlN samples. Single p-i-n junction solar cells made of the same In x Ga 1-x N alloy composition are developed. Upon illumination by a 325 nm laser, V oc is measured at 2.5 V with a fill factor of 61% for all-GaN cell. Clear photo-responses are also observed in InGaN cells with 0.2 and 0.3 Indium content when illuminated by focused outdoor sunlight.