Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
- Resource Type
- article
- Authors
- Jie Wang; Zhanfei Chen; Shuzhen You; Benoit Bakeroot; Jun Liu; Stefaan Decoutere
- Source
- Micromachines, Vol 12, Iss 2, p 199 (2021)
- Subject
- p-GaN gate high-electron mobility transistors
compact model
physics-based models
surface potential
Mechanical engineering and machinery
TJ1-1570
- Language
- English
- ISSN
- 2072-666X
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.