为了探究低能N+注入对大肠杆菌16S rRNA遗传进化与耐药表征的作用,本研究利用低能N+注入诱变筛选耐药大肠杆菌,通过基因组de novo测序获得其16S rRNA基因序列,通过K-B法检测诱变菌株的耐药特征.结果共诱变获得了25株耐药菌株,其中5株诱变菌16S rRNA基因分别出现片段缺失,点突变(A257C),GC%含量增高,二级结构变异,并获得多药耐药特性.结果提示:低能N+注入可以驱动大肠杆菌16S rRNA基因的随机突变和进化,进而调节耐药基因从头合成或变异,使大肠杆菌耐药性改变.
To further understand the role of low-energy N+implantation in the phylogenetic evolution and characterization of drug resistance in Escherichia coli(E.coli),this study used low-energy N+ion implantation to screen for drug resistant E.coli.The 16S rRNA gene sequences were obtained through de novo genome sequencing,and the drug resistance characteristics of mutant strains were assessed using the K-B method.Twenty-five drug-resistant strains were obtained by mutagenesis.The 16S rRNA in five mutant strains had a point mutation(A257C)or a gene deletion in C1,V1,V2,V6-V9,and C6-C9 regions,respectively.GC content increased and the mutation rate reached 0.4%-0.6%.The results indicate that low-energy N+ion implantation could trigger mutations and drive 16S rRNA gene evolution in E.coli.,which could accelerate development of antibiotic resistance in E.coli.