65 nm闪存芯片擦除时间退化的优化设计 / Optimization of Erase Time Degradation in 65nm NOR Flash Memory Chips
- Resource Type
- Academic Journal
- Source
- 电子科技大学学报 / Journal of University of Electronic Science and Technology of China. 48(4):492-497
- Subject
擦除退化 闪存 氧化层陷阱 可靠性 阶梯脉冲电压 - Language
- Chinese
- ISSN
- 1001-0548