针对太赫兹波段固态大功率应用需求,基于氮化镓功率放大器单片集成电路(Monolithic Microwave Integrated Circuit,MMIC),采用功率合成技术实现了太赫兹波段瓦级功率输出.通过太赫兹波段微带/波导转换结构和键合金丝补偿技术,结合E面T型结二路合成功率分配/合成器,将两片MMIC封装成最大输出功率为160 mW的功率单元模块.在此基础上,采用八路E面合成器设计了频率覆盖180~238 GHz的十六路功率合成放大器.在漏极电压为+10 V时,带内输出功率大于300 mW,189 GHz输出功率达到了1.03 W.
With the application demands of solid-state high power in the terahertz(THz)band,a THz-band watt-level power output is achieved by adopting GaN power amplifier(PA)MMIC and power combining technology.Microstrip-waveguide transition,and the low-loss interconnection based on the gold wire compensation are used to package a PA module composed of two PA MMICs and an E-plane T-junction two-way power splitter/combiner.Maximum output power of 160 mW is achieved.Based on the module and an eight-way E-plane combiner,a sixteen-way power combin-ing amplifier is designed across the frequency range of 180 to 238 GHz.Output power of more than 300 mW is achieved with +10 V drain voltage,and the maximum power is 1.03 W at 189 GHz.