利用垂直WS2/Ga2O3异质结构中异质界面诱导了反常的光致发光(PL)发射.垂直堆栈的WS2/Ga2O3异质界面使其形成了II型能带结构,导致与Ga2O3层接触的底层WS2的PL强度下降.而异质界面的强耦合作用也影响了双层WS2中的同质层间相互作用,使得上层WS2出现反常的PL增强.这种堆栈新型二维异质结构为定制目标能带结构并控制其光子和电子行为提供一种新的手段.
The hetero-interface induced anomalous photoluminescence (PL) emissions in the vertical WS2/ Ga2O3 heterostructures was demonstrated. The WS2/Ga2O3 hetero-interface varies type-Ⅱ band structure and brings subsequent PL decline in the bottom WS2 monolayer contacted with Ga2O3 layer. Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides (TMDs) in the stacked heterostruc? tures impacts interlayer interaction between the bottom WS2 monolayer and the upper WS2 monolayer in a WS2 bi? layer, which leads to an anomalous PL enhancement in the bilayer WS2. Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.