一种基于40nm CMOS体硅工艺的抗单粒子翻转触发器设计 / Design of Single-event Upset Self-recovery Flip-flop in 40nm CMOS Technology
- Resource Type
- Academic Journal
- Source
- 小型微型计算机系统 / Journal of Chinese Computer Systems. 44(12):2851-2857
- Subject
触发器设计 单粒子三节点翻转 抗辐照加固 双联锁存储单元 flip-flop triple node upset radiation hardening dual interlocked storage cell - Language
- Chinese
- ISSN
- 1000-1220