绝缘栅双极型晶体管IGBT(insulated-gate bipolar transistor)在现代电力电子技术中应用广泛,在某些单个器件性能达不到设计要求的工作场合,IGBT的并联使用成为一种经济可行的方法.多模块IGBT并联应用可以简化电路结构,增大变流器输出功率,提高装置功率密度.IGBT并联应用过程中,器件本体的动、静态特性及结温的差异,驱动电路结构及功率回路不对称性,伴随IGBT长期使用出现的老化或失效等问题,都会引起并联IGBT支路电流的不均衡,影响系统的可靠性和稳定性.对国内外IGBT并联应用所关注的研究热点进行了调研分析,总结了 IGBT并联动、静态电流不均衡产生的原理及影响,分析了电流均衡控制原理的差异.从功率回路均流控制和驱动回路均流控制两个方面,对IGBT并联应用均流控制的工作特性进行了分析总结和技术对比,并对IGBT并联均流技术的发展方向进行了展望.
The insulated-gate bipolar transistors(IGBTs)have been widely applied in the modern power electronics technology,and the paralleling of IGBTs has become an economical and feasible method in some working scenarios where one single device cannot meet the design requirements.The paralleling of IGBT modules can simplify the circuit structure,increase the converter output power,and improve the power density of devices.During the operation of IGBTs in parallel,the current imbalance,which may be caused by the difference in IGBTs'characteristics in a static or dynamic mode,the inconsistency of junction temperature,the asymmetry of a drive circuit or power loop,as well as the aging or failure of IGBTs due to long-term use,will affect the system's reliability and stability.The research hotspots of parallel-operating IGBTs at home and abroad are investigated.The principle and influence of static and dynamic current imbalance are summarized,and the difference in the current-sharing control principles is analyzed.The performance characteristics of current-sharing control are summarized and compared from the aspects of power loop current-sharing control and drive circuit current-sharing control.Furthermore,the development of current-sharing technologies for parallel-operating IGBTs in the future is also prospected.