衬底偏压对反应磁控共溅射Y∶HfO2薄膜电学性能的影响 / Effect of substrate bias on electrical properties of Y:HfO2 films deposited by reactive magnetron co-sputtering
- Resource Type
- Academic Journal
- Source
- 材料科学与工艺 / Materials Science and Technology. 31(5):16-23
- Subject
氧化铪薄膜 漏电流密度 衬底偏压 反应磁控共溅射 粗糙度 HfO2 film leakage current density substrate bias reactive magnetron co-sputtering film roughness - Language
- Chinese
- ISSN
- 1005-0299