Epitaxial {\alpha}-Ta (110) film on a-plane sapphire substrate for superconducting qubits on wafer scale
- Resource Type
- Working Paper
- Authors
- Zhou, Boyi; Yang, Lina; Wang, Tao; Wu, Yanfu; Xiong, Kanglin; Feng, Jiagui
- Source
- Jpn. J. Appl. Phys. 62 100901 (2023)
- Subject
- Quantum Physics
Condensed Matter - Materials Science
- Language
Realization of practical superconducting quantum computing requires many qubits of long coherence time. Compared to the commonly used Ta deposited on c-plane sapphire, which occasionally form {\alpha}-Ta (111) grains and \b{eta}-tantalum grains, high quality Ta (110) film can grow epitaxial on a-plane sapphire because of the atomic relationships at the interface. Well-ordered {\alpha}-Ta (110) film on wafer-scale a-plane sapphire has been prepared. The film exhibits high residual resistance ratio. Transmon qubits fabricated using these film shows relaxation times exceeding 150 {\mu}s. The results suggest Ta film on a-plane sapphire is a promising choice for long coherence time qubit on wafer scale.