Electronic topological transition of 2D boron by the ion exchange reaction
- Resource Type
- Working Paper
- Authors
- Zhang, Xiaoni; Tsujikawa, Yuki; Tateishi, Ikuma; Niibe, Masahito; Wada, Tetsuya; Horio, Masafumi; Hikichi, Miwa; Ando, Yasunobu; Yubuta, Kunio; Kondo, Takahiro; Matsuda, Iwao
- Source
- Subject
- Condensed Matter - Materials Science
- Language
We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layered crystal of YCrB$_4$ is an insulator ($Z_2=1$). The results demonstrate the electronic topological transition by replacement of the counter atoms on the non-symmorphic borophene layer.