Ultrabroadband THz/IR upconversion and photovoltaic response in semi-conductor ratchet based upconverter
- Resource Type
- Working Paper
- Authors
- Bai, Peng; Yang1, Ning; Chu, Weidong; Zhang, Yueheng; Shen, Wenzhong; Fu, Zhanglong; Shao, Dixiang; Zhou, Kang; Tan, Zhiyong; Li, Hua; Cao, Juncheng; Li, Lianhe; Linfield, Edmund Harold; Xie, Yan; Zhao, Ziran
- Source
- Subject
- Physics - Applied Physics
- Language
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existing upconversion devices. Broadband IR/THz radiation from 1000 K blackbody is successfully upconverted into NIR photons which can be detected by commercial Si-based device. The normal incidence absorption of the RP simplifies the structure of the RP-LED device and make it more compact compared with the inter-subband transition based upconverters. In addition to the up-conversion function, the proposed upconverter is also tested as photovoltaic detectors in the infrared region (15-200 THz) without an applied bias voltage due to the ratchet effect.