Lattice matched Volmer-Weber growth of Fe$_3$Si on GaAs(001) -- the influence of the growth rate
- Resource Type
- Working Paper
- Authors
- Jenichen, B; Cheng, Z; Hanke, M; Herfort, J; Trampert, A
- Source
- Subject
- Condensed Matter - Materials Science
Condensed Matter - Mesoscale and Nanoscale Physics
- Language
We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe$_3$Si/GaAs-interface for higher growth rates, whereas they are fully ordered for lower growth rates.