Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate
- Resource Type
- Authors
- Deok-Yong Cho; Hyun Soo Jin; Tae Jun Seok; Tae Joo Park
- Source
- Applied Surface Science. 491:83-87
- Subject
- chemistry.chemical_classification
X-ray absorption spectroscopy
Materials science
Sulfide
Absorption spectroscopy
Passivation
Annealing (metallurgy)
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Surfaces and Interfaces
General Chemistry
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Oxygen
0104 chemical sciences
Surfaces, Coatings and Films
Chemical state
chemistry
Chemical engineering
Thin film
0210 nano-technology
- Language
- ISSN
- 0169-4332
S passivation of a HfO2 film on an InP substrate is demonstrated using annealing in H2S ambient either before or after ALD of the HfO2 film. We examined the resulting distribution and chemical state of the incorporated S both in the HfO2 film and at its interface with the InP substrate using secondary ion mass spectroscopy and X-ray absorption spectroscopy. Annealing in H2S ambient before ALD of HfO2 resulted in accumulation of S at the interface in the sulfide (S2−) phase (due to lack of oxygen), which effectively suppressed interfacial reactions during ALD and passivated interfacial defect states. On the other hand, annealing in H2S ambient after ALD of the HfO2 film induced a sulfate (S6+) phase in the film due to the abundant oxygen in the film, as well as a sulfide (S2−) phase at the interface. This improved the charge trapping behavior by decreasing the bulk defect density in the HfO2 film.