Fabrication and Characterization of Artificial Crystal Originated Particles
- Resource Type
- Authors
- Rüdiger Schmolke; Marc Heyns; Twan Bearda; Paul Mertens
- Source
- Japanese Journal of Applied Physics. 38:L1509
- Subject
- Materials science
Fabrication
Silicon
business.industry
technology, industry, and agriculture
General Engineering
Oxide
General Physics and Astronomy
chemistry.chemical_element
Time-dependent gate oxide breakdown
Equivalent oxide thickness
Crystal
chemistry.chemical_compound
chemistry
Gate oxide
Optoelectronics
Wafer
business
- Language
- ISSN
- 1347-4065
0021-4922
Crystal Originated Particles on silicon substrates were imitated by anisotropic etching of pits in the wafer surface. The effect of these artificial defects on the gate oxide in Metal-Oxide-Semiconductor devices was studied. The results show a combined effect of local oxide thinning and electric field distortion on the electrical characteristics of the gate oxide.