Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride
- Resource Type
- Source
- Electronics Letters. 24:1269
- Subject
Materials science Silicon business.industry Gate dielectric chemistry.chemical_element Dielectric Chemical vapor deposition Nitride chemistry.chemical_compound Silicon nitride chemistry Gate oxide Plasma-enhanced chemical vapor deposition Electronic engineering Optoelectronics Electrical and Electronic Engineering business - Language
- ISSN
- 0013-5194