Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film
- Resource Type
- Authors
- Pande Zhang; Zhiguo Wu; Baisong Geng; X.Y. Fan; P.X. Yan; Huajun Li; Can Li
- Source
- Materials Letters. 62:1805-1808
- Subject
- Materials science
Fabrication
Residual nitrogen
X-ray photoelectron spectroscopy
Chemical engineering
Mechanics of Materials
Annealing (metallurgy)
Sputtering
Mechanical Engineering
Nanowire
General Materials Science
Nanotechnology
Condensed Matter Physics
- Language
- ISSN
- 0167-577X
Well-ordered CuO nanowire arrays were prepared through directly annealing the sputter-deposited Cu 3 N film at 300 °C for 90 min in atmosphere. The XRD and XPS results indicate that the Cu 3 N film completely changes to CuO without any other oxides such as after annealed. XPS results also indicate that there is also residual nitrogen in the CuO nanowire arrays. The FE-SEM and TEM images show that the CuO nanowire arrays are vertical to the substrate with a diameter of about 20 nm and a length of ∼ 0.6 μm. The growth mechanism is also discussed preliminarily.