Thermoelectric Devices by Half-Millimeter-Long Silicon Nanowires Arrays
- Resource Type
- Authors
- Meng-Hsin Wu; Wei-Chieh Wang; Cheng Lun Hsin
- Source
- IEEE Transactions on Nanotechnology. 18:921-924
- Subject
- Materials science
business.industry
Nanowire
Sintering
02 engineering and technology
021001 nanoscience & nanotechnology
Computer Science Applications
Waste heat
Thermoelectric effect
Optoelectronics
Figure of merit
Millimeter
Electrical and Electronic Engineering
0210 nano-technology
business
Silicon nanowires
Polyimide
- Language
- ISSN
- 1941-0085
1536-125X
Waste heat scavenging and IC hot spot cooling have been important topics of investigation for many decades. In this study, a novel sub-millimeter silicide/Si nanowires/Ag paste thermoelectric device is fabricated and its thermoelectric properties from 25 to 200 °C are studied. Polyimide packaging between the nanowires was used to enhance the mechanical strength of the device. The figure of merit of n-type and p-type device reached ∼0.25 and 0.21 at 200 °C, respectively, demonstrating 5 times enhancement on the ZT value compared with Si. Our experimental results prove that this method provides a cost-effective approach to fabricate thermoelectric nanodevices for future thermoelectric applications without traditional powder milling and sintering processes.