Hole mobility of GaAs1−xNx grown by chemical beam epitaxy
- Resource Type
- Authors
- Nobuaki Kojima; Masafumi Yamaguchi; Hidetoshi Suzuki; Yoshio Ohshita; Taiki Hashiguchi
- Source
- 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
- Subject
- Electron mobility
Materials science
business.industry
Scattering
Substrate (electronics)
Molecular physics
Chemical beam epitaxy
Gallium arsenide
chemistry.chemical_compound
Molecular beam epitaxial growth
chemistry
Impurity
Atom
Optoelectronics
business
- Language
N induced scattering in GaAs 1−x N x films are quantitatively investigated, and reduction of the scattering is demonstrated. The hole mobility of GaAsN films is separated to individual scattering processes by parameter fitting. The mobility limited by the N induced scattering is fitted by the function of µN = K N T−(0.6±0.2). The amount of N induced scattering center increases linearly with increasing N composition. These results suggest that the origin of induced scattering is point defect contained one N atom. In the case of GaAs (001) 10° off substarte, µN−1 was lower than that grown on a 2µ off substrate. It suggests that the hole mobility can be improved by using high step density substrate.