Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS
- Resource Type
- Authors
- Shinobu Fujita; Junichi Ito; Tadaomi Daibou; Shinji Miwa; Yoshishige Suzuki; Hiroki Noguchi; Megumi Yakabe; Naoki Hase; Daisuke Saida; Miyoshi Fukumoto; Saori Kashiwada
- Source
- 2016 IEEE Symposium on VLSI Technology.
- Subject
- 010302 applied physics
Magnetoresistive random-access memory
CPU cache
business.industry
Computer science
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Fast switching
Pulse (physics)
Power (physics)
Tunnel magnetoresistance
CMOS
0103 physical sciences
Electronic engineering
Perpendicular
Optoelectronics
0210 nano-technology
business
- Language
A novel perpendicular magnetic tunnel junction (MTJ) is developed that can be switched using pulse widths of around 1 ns and currents of less than 100 µA. This paper presents the first demonstration in novel achievement of fast switching, low power operation and size scalability of write current down to 16 nm diameter MTJ. This MTJ satisfies retention which is typically required in cache memory. Measurement results show that our proposed MTJ can open a path to embedded STT-MRAM in sub-20 nm CMOS generation.