In-situ micro bend testing of SiC and the effects of Ga+ ion damage
- Resource Type
- Authors
- Scott Doak; Stuart Robertson; Zhaoxia Zhou; Houzheng Wu
- Source
- Journal of Physics: Conference Series. 902:012002
- Subject
- 010302 applied physics
History
Range (particle radiation)
Cantilever
Materials science
Modulus
Nanotechnology
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Computer Science Applications
Education
Ion
Carbide
Transmission electron microscopy
0103 physical sciences
Irradiation
Composite material
0210 nano-technology
Beam (structure)
- Language
- ISSN
- 1742-6596
1742-6588
The Young's modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young's modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.