We describe measurements of the threshold current of 1.3 μm and 1.5 pm InGaAs(P)-based quantum-well lasers measured at cryogenic temperatures and at high pressures. At low temperatures (∼100 K), we find that the threshold current of the devices increases with increasing pressure consistent with the calculated pressure variation of the radiative current. This is in sharp contrast with their pressure dependence at room temperature (RT), where the threshold current decreases with increasing pressure due to the decrease in importance of Auger recombination. These low-temperature, high-pressure results agree well with previous temperature dependence measurements on the same devices, which show a transition from radiative to non-radiative Auger recombination dominated behaviour as the laser temperature is increased from ∼100 K to room temperature.