Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures
- Resource Type
- Authors
- Teh Y. Tan; Peter Werner; Masashi Uematsu; H. Ito; Otwin Breitenstein; M. Schultz; U. Egger; U. Gösele; R. Franzheld
- Source
- Journal of Applied Physics. 81:6056-6061
- Subject
- Surface diffusion
Condensed matter physics
Condensed Matter::Other
Annealing (metallurgy)
Superlattice
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Cathodoluminescence
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Secondary Ion Mass Spectroscopy
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Spectroscopy
Arsenic
- Language
- ISSN
- 1089-7550
0021-8979
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850 °C and 1100 °C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism.