In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer
- Resource Type
- Authors
- Satoshi Kamiyama; Mihoko Sowa; Isamu Akasaki; Motoaki Iwaya; Yasunari Kondo; Daisuke Iida; Tetsuya Takeuchi; Daiki Tanaka
- Source
- Journal of Crystal Growth. 361:1-4
- Subject
- Inorganic Chemistry
Diffraction
In situ
Materials science
Annealing (metallurgy)
X-ray crystallography
Vapor phase
Materials Chemistry
Sapphire
Analytical chemistry
Condensed Matter Physics
Epitaxy
Buffer (optical fiber)
- Language
- ISSN
- 0022-0248
We investigated in situ X-ray diffraction (XRD) monitoring during the growth of low-temperature (LT)-GaN buffer layers on the (0001) c -plane sapphire substrates. The in situ XRD monitoring made it possible to observe the crystalline structures during their growth. We investigated the temperature dependence of LT-GaN buffer layers by in situ XRD monitoring during the thermal annealing of the LT-GaN layers. We clearly observed the evolution process, in which an LT-GaN buffer layer grown at 535 °C was crystallized into a hexagonal structure by thermal annealing at temperatures of up to 1090 °C. We also found that the LT-GaN buffer layer was transformed into nano size hexagonal single-crystal islands upon annealing by atomic force microscopy. The crystalline quality of the subsequent GaN layer strongly depended on the growth temperature of the LT-GaN buffer layer.