Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
- Resource Type
- Authors
- Rongyu Lin; Wei Guo; Zhihua Zheng; Feng Wu; Changqing Chen; Jiangnan Dai; Yi Zhang; Zhe Chuan Feng; Maocheng Shan; Jie’an Jiang; Xiaohang Li; Yi Lu; Yongming Zhao; Ming Tian
- Source
- ACS Photonics. 8:1264-1270
- Subject
- Materials science
Condensed Matter::Other
business.industry
Exciton
Physics::Optics
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Polarization (waves)
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
010309 optics
Condensed Matter::Materials Science
Wavelength
Transverse plane
0103 physical sciences
Optoelectronics
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
0210 nano-technology
business
Lasing threshold
Quantum well
Biotechnology
- Language
- ISSN
- 2330-4022
We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm2 is compar...