Effect of new processes of inter-layer-dielectric on plasma charging damage in 0.13μ dual gate oxide
- Resource Type
- Authors
- Kin Leong Yap Andrew; Lian Hoon Ko; Keng Foo Lo; Wen Hui Lu
- Source
- IEEE International Integrated Reliability Workshop Final Report, 2003.
- Subject
- Materials science
business.industry
Gate dielectric
Electrical engineering
Oxide
chemistry.chemical_element
Plasma
Dielectric
Dual gate
chemistry.chemical_compound
chemistry
Gate oxide
Optoelectronics
business
Helium
Leakage (electronics)
- Language
New processes of Inter-Layer-Dielectric (ILD) in 0.13/spl mu/m dual gate oxide have been developed. Etch stop liner (ESL) changes from single stack SiN to dual stack ESL (SiON/SiN) and helium cooling is added during ILD high density plasma (HDP) film deposition. The plasma charging damage is investigated on new and old ILD process. Gate leakage of related antenna structures is measured. It is found from our study that new process changes can reduce thin 1.2V and thick 2.5V/3.3V gate leakage of antenna structures. So plasma charging damage is reduced by new ILD.