A 50 ns 4K static DSA MOS RAM
- Resource Type
- Authors
- Kazuhiro Shimotori; Y. Nagayama; Masashi Ohmori; Isao Ohkura; Takao Nakano
- Source
- IEEE Journal of Solid-State Circuits. 13:639-646
- Subject
- Materials science
business.industry
Transistor
Electrical engineering
Substrate (electronics)
Dissipation
Diffusion capacitance
Die (integrated circuit)
law.invention
Semiconductor
Gate oxide
law
Optoelectronics
Static random-access memory
Electrical and Electronic Engineering
business
- Language
- ISSN
- 1558-173X
0018-9200
An advanced DSA MOS (DMOS) technology is discussed as it applies to a high-speed 4K bit semiconductor static memory. It uses a polysilicon gate length of 4 /spl mu/m, a gate oxide thickness less than 800 /spl Aring/, and a shallow junction depth (