The influences of laser scanning speed on the structural and optical properties of thin GaN films separated from sapphire substrates by excimer laser lift-off
- Resource Type
- Authors
- Lijie Li; H Long; D.J. Lv; Z X Liu; Peixiang Lu; Z Y Yang; G Yang; X L Tong; K Ling; D S Zhang; Y T Dai
- Source
- Journal of Physics D: Applied Physics. 42:045414
- Subject
- Materials science
Acoustics and Ultrasonics
Laser scanning
Silicon
medicine.medical_treatment
Analytical chemistry
chemistry.chemical_element
Gallium nitride
law.invention
chemistry.chemical_compound
symbols.namesake
law
medicine
Thin film
Excimer laser
business.industry
Condensed Matter Physics
Laser
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
symbols
Sapphire
Optoelectronics
business
Raman spectroscopy
- Language
- ISSN
- 1361-6463
0022-3727
Gallium nitride (GaN) films grown on sapphire substrates were successfully separated and transferred onto silicon (Si) substrates using the laser lift-off (LLO) process induced by an excimer pulsed laser. The structural and optical properties of the GaN films before and after LLO were characterized by x-ray diffraction, atomic force microscopy and Raman spectroscopy. The influences of the laser scanning speed on the structural and optical properties of thin GaN films before and after LLO have been studied, which demonstrated that the laser scanning speed alters the structural quality of the GaN films. The results show that the quality of GaN films is dependent on the LLO process parameter.