Influence of layout design on the performance of LIGBT
- Resource Type
- Authors
- S. Hardikar; E.M. Sankara Narayanan; D.W. Green; M. Sweet; J.C. Nicholls
- Source
- IEE Proceedings - Circuits, Devices and Systems. 153:67
- Subject
- Engineering
business.industry
Circuit design
Bipolar junction transistor
Electrical engineering
Insulated-gate bipolar transistor
Cathode
Anode
law.invention
Safe operating area
law
Waveform
Electrical and Electronic Engineering
business
Common emitter
- Language
- ISSN
- 1350-2409
The influence of layout design upon the static and dynamic performance of 500 V lateral insulated gate bipolar transistors is investigated through simulations and measurements at both room temperature and 100°C. Results demonstrate that the cathode, in addition to the anode design has a significant influence on the safe operation area of the device. While modifying both the anode and cathode design improves the safe operating area, the layout of the P + emitter (anode) has the most dominant effect.