Tunnelling between edge channels in the quantum hall regime manipulated with a scanning force microscope
- Resource Type
- Authors
- J. Rychen; Klaus Ensslin; Werner Wegscheider; Max Bichler; Thomas Ihn
- Source
- Microelectronic Engineering. 63:81-85
- Subject
- Coupling
Scanning Hall probe microscope
Condensed matter physics
Chemistry
Scanning electron microscope
Conductance
Edge (geometry)
Quantum Hall effect
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Tunnel effect
Condensed Matter::Superconductivity
Electrical and Electronic Engineering
Quantum tunnelling
- Language
- ISSN
- 0167-9317
The tunnelling conductance between edge channels in the quantum Hall regime was measured. The tunnelling coupling is locally enhanced by a local repulsive potential induced by the conducting tip of a scanning force microscope. This allows mapping the enhanced tunnelling coupling along the sample edge and, in this sense, visualizes the presence of edge channels.