Fabrication of MIS photodetector with Ge nanocrystals grown by MBE
- Resource Type
- Authors
- Isabelle Berbezier; R. M’gaieth; Luc Favre; Mansour Aouassa; B. Azeza
- Source
- Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, 2021, 32 (12), pp.16800-16810. ⟨10.1007/s10854-021-06237-2⟩
- Subject
- [PHYS]Physics [physics]
010302 applied physics
Photocurrent
Materials science
business.industry
Scanning electron microscope
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Amorphous solid
Monocrystalline silicon
0103 physical sciences
Optoelectronics
Dewetting
Electrical and Electronic Engineering
Silicon oxide
business
High-resolution transmission electron microscopy
ComputingMilieux_MISCELLANEOUS
Molecular beam epitaxy
- Language
- ISSN
- 1573-482X
0957-4522
In this paper, it is shown for the first time that Ge nanocrystals (Ge NCs) obtained via solid-state dewetting of amorphous GOI can be used as the active absorbers embedded in a silicon dioxide matrix of metal–insulator–semiconductor photodetectors (MIS PD). The Ge NCs have been obtained by a combination of Ge deposition by molecular beam epitaxy (MBE) on tunnel thermal silicon oxide and solid-state dewetting processes. The structural and morphology characterizations performed using high-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) show that the Ge NCs embedded in SiO2 of MIS PD are monocrystalline, homogeneous and have well-defined shape and high density suitable for optoelectronic applications. The I–V and photocurrent measurements performed on these innovative structures show that the Ge NCs contribute efficiently in the electrical transport by increasing the current density via creating an intermediate conduction step in the MIS structure and enhance the photocurrent via photogeneration of new carriers. We have observed that for the structure with Ge NCs, the photocurrent increases 10 times at reverse bias Vg = − 1 V when it is illuminated. These results indicate that the crystalline Ge NCs obtained via solid-state dewetting can be integrated with optoelectronics and photonics technologies to produce new high-performance optoelectronic devices fully compatible with complementary oxide metal (CMOS) technology.