TCAD study of DLC coatings for large-area high-power diodes
- Resource Type
- Authors
- Luigi Balestra; J. Vobecký; Antonio Gnudi; C. Tosi; Giorgio Baccarani; Susanna Reggiani; J. Dobrzynska; Elena Gnani
- Source
- Microelectronics Reliability. :1094-1097
- Subject
- Atomic and Molecular Physics, and Optic
Materials science
Passivation
Band gap
Surfaces, Coatings and Film
Condensed Matter Physic
02 engineering and technology
01 natural sciences
Reliability (semiconductor)
0103 physical sciences
Breakdown voltage
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Diode
010302 applied physics
business.industry
Electronic, Optical and Magnetic Material
Doping
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Bevel
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Optoelectronics
0210 nano-technology
business
Layer (electronics)
- Language
- ISSN
- 0026-2714
The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the reliability expectations for high-voltage device passivation. Starting from the band structure and boundary conditions of a metal-insulator-semiconductor (MIS) device, trap states in the bandgap have been used to determine the characteristics of differently doped DLC layers against experiments. The role of the DLC as a passivation layer on top of the bevel termination of a high-voltage diode has been studied and compared with experiments. The breakdown voltage is significantly influenced by the properties of the DLC as clearly explained by the TCAD simulation results.