A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate
- Resource Type
- Authors
- Belenger, B.; Espana, Béatrice; Courrèges, Stanis; Blondy, Pierre; Vendier, Olivier; Langrez, Dominique; Cazaux, Jean-Louis
- Source
- Microwave Integrated Circuits Conference (EuMIC)
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Microwave Integrated Circuits Conference (EuMIC), 2011 European, Oct 2011, Manchester, United Kingdom. pp.164-167
- Subject
- Micromechanical devices
Substrates
Radio frequency
Insertion loss
Phase measurement
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Phase shifters
Microswitches
- Language
- English
International audience; In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.