Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor
- Resource Type
- Authors
- Toru Onishi; Wakana Takeuchi; Hirokazu Fujiwara; Osamu Nakatsuka; Shinya Iwasaki; Eiji Kagoshima; Mitsuo Sakashita; Katsuhiro Kutsuki
- Source
- Japanese Journal of Applied Physics. 59:SGGD08
- Subject
- 010302 applied physics
Materials science
Fabrication
Physics and Astronomy (miscellaneous)
Transistor
General Engineering
General Physics and Astronomy
01 natural sciences
law.invention
Effective mass (solid-state physics)
Compressive strength
law
0103 physical sciences
MOSFET
Ultimate tensile strength
Perpendicular
Field-effect transistor
Composite material
- Language
- ISSN
- 1347-4065
0021-4922
We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions and was investigated on the bend directions and with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced stress.